Part Number | IRF3808SPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 75V 106A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 106A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 220nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5310pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 82A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRF3808SPBF
INFIENON
1000
0.21
MY Group (Asia) Limited
IRF3808SPBF
Infinen
90
0.515
Gallop Great Holdings (Hong Kong) Limited
IRF3808SPBF
INFLNEON
46000
0.82
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF3808SPBF
Infineon Technologies A...
63202747
1.125
LUCK IN INTERNATIONAL GROUP LIMITED
IRF3808SPBF
INFINEON/IR
100
1.43
RX ELECTRONICS LIMITED