Description
DATASHEET Aug 29, 2003 IRF4104 . TO-262. IRF4104L . Absolute Maximum Ratings. Parameter. Units. ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon IRF4104 . 40V. 120A. 5.5 mOhm. 68 nC. TO-220AB. IRF1404Z. 40V. 190A. 3.7 mOhm. 100 nC. TO-220AB. IRFP4004. 40V. 350A. 1.7 mOhm. 220 nC. TO- 247AC.
Part Number | IRF4104L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 40V 75A TO-262 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRF4104L
INFIENON
200
1.85
ABBI Electronics Company Limited
IRF4104L
Infinen
1000
2.8475
MY Group (Asia) Limited
IRF4104L
INFLNEON
5000
3.845
G Trader Limited
IRF4104L**
Infineon Technologies A...
49800
4.8425
Ande Electronics Co., Limited
IRF4104L
INFINEON/IR
5300
5.84
HK Xinyuhang Electronic Co.,Ltd