Description
IRF450 . HEXFET.. TRANSISTORS. JANTX2N6770. THRU-HOLE (TO-204AA/AE) . JANTXV2N6770. 01/22/01 www.irf.com. 1. TO-3 . Product Summary. /543 TO-254 (T1). N. 400V. 150W. 3 IRF450 . 2N6770. 2N6770. X. X. X. /543 TO-3 . N. 500V. 150W. 4 No IR Eq. 2N6770T1 2N6770T1. X. X. X. /543 TO-254 (T1). Current unbalance and transition energy ratios are evaluated for three different .. IRF450 , 1. 452, 3 . 25. 20. 5.5. 3.40. 4.55. 3.64. 2.13. 1.91. 0.940. 1.05. 1.4. 0.6. 3 -phase rectifier bridge. 3 -phase, short circuit rated, ultrafast IGBT inverter. HEXFRED ultrafast soft recovery freewheeling diodes. Low inductance (current TO-204AA ( TO-3 with 40 mil pins). TO-39 205AF (TO-39) IRF450 . 2N6770. N. 500. 20. 400. 12. 150. N/A. IRF9130. 2N6804. P. -100. 20. 300. -11. 75. N/A.
Part Number | IRF450 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 500V 12A TO-3-3 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-204AA (TO-3) |
Package / Case | TO-204AA, TO-3 |
Image |
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