Infineon Technologies AG

Description

Aug 25, 1997 HEXFET Power MOSFET. PD - 9.1478A l Advanced Process Technology l Surface Mount ( IRF4905S ) l Low-profile through-hole (IRF4905L). May 8, 2005 IRF4905S /L. 2 www.irf.com. Electrical Characteristics @ TJ = 25 C (unless otherwise specified). Parameter. Min. Typ. Max. Units. V(BR)DSS. Jun 11, 2003 Page 1. IRF4905PbF. HEXFET Power MOSFET. PD - 94816. Fifth Generation HEXFETs from International Rectifier utilize advanced Sep 15, 2011 IRF4905S . MOSFET, P-ch, -55V, -74A , 20milliOhms. D PAK. IRF4905S . IR. 4. Q2 , Q4, Q6, Q7. Si4840DY. MOSFET, N-ch, 40V, 14A, 9milliohm. Aug 25, 1997 (See Figure 12). t=60s, =60Hz. ISD -38A, di/dt -270A/ s, VDD V(BR) DSS,. TJ 175 C. Uses IRF4905 data and test conditions.