Part Number | IRF510PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 5.6A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 43W (Tc) |
Rds On (Max) @ Id, Vgs | 540 mOhm @ 3.4A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
Hot Offer
IRF510PBF
INFLNEON
9538
2.745
Kinghead Electronics Co.,Limited
IRF510PBF
Infineon Technologies A...
1186
4.0275
China Electronics Industry Group Co., Limited
IRF510PBF
INFINEON/IR
8322
5.31
HK HORIZON MICROELECTRONICS LIMITED
IRF510PBF
INFIENON
7874
0.18
HK HEQING ELECTRONICS LIMITED
IRF510PBF MOS()
Infinen
5121
1.4625
CIS Ltd (CHECK IC SOLUTION LIMITED)