Part Number | IRF520NSPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 9.7A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 5.7A, 10V |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRF520NSPBF
INFIENON
4000
1.63
HK HEQING ELECTRONICS LIMITED
IRF520NSPBF
Infinen
16000
2.555
Finestock Electronics HK Limited
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INFLNEON
18650
3.48
Fairstock HK Limited
IRF520NSPBF
Infineon Technologies A...
31359
4.405
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
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INFINEON/IR
5000
5.33
Yingxinyuan INT'L (Group) Limited