Part Number | IRF520NSTRRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 9.7A D2PAK |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 5.7A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRF520NSTRRPBF
INFIENON
686
0.05
HK HEQING ELECTRONICS LIMITED
IRF520NSTRRPBF
Infinen
35200
0.88
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF520NSTRRPBF
INFLNEON
800
1.71
Yingxinyuan INT'L (Group) Limited
IRF520NSTRRPBF
Infineon Technologies A...
21686
2.54
N&S Electronic Co., Limited
IRF520NSTRRPBF
INFINEON/IR
11686
3.37
N&S Electronic Co., Limited