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Description
DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low Page 1. V3. 2.5 volts. U1. LM317. V2. M2. IRF530 . V1. V4. 6.89 V. R4. 240. D1. 1N4148. R2. 25 k. R6. 220. R7. 240. 0.0V. 6.32V. 6.89. V7. 6.32 V. V4. Page 1. V3. 3.3 volts. U1. LM317. V2. M2. IRF530 . V1. R4. 394. D1. 1N4148. R2. 25 k. R6. 220. R7. 240. 0.0V. 6.32V. 6.69. V4. SW3. BAT1. 6.32 V. BAT2. 6.69 V. Date: 27-Apr-16. Sheet of. File: Sheet1.SchDoc. Drawn By: 10n. C2. CAP 1. 1u. C4. CAP 1. 100n. C5. CAP 1. GND. 1u. C8. CAP 1. 100n. C7. CAP 1. GND. GND.
| Part Number | IRF530 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 100V 14A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 670pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 8.4A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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