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Description
V. TO-220. 1.Gate 2. Drain 3. Source. 3. 2. 1. . . O1. O2. O3. C. C. O1. O1 . C. C. C. C. C . IRF530A . BVDSS = 100 V. RDS(on) = 0.11. ID = 14 A. Document Number: 91019 www.vishay.com. S11-0510-Rev. B, 21-Mar-11. 1. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED Semiconductor Components Industries, LLC, 2006. August, 2006 Rev. 2. 1. Publication Order Number: IRF530 /D. IRF530 . Product Preview. TMOS E FET. . NEW DATASHEET ACCORDING TO PCN DSG/CT/1C02 MARKING: IRF530 @. IRF530 . N-CHANNEL 100V - 0.115 - 14A TO-220. LOW GATE CHARGE
| Part Number | IRF530A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 100V 14A TO-220 |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 7A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
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