Infineon Technologies AG

Description

IRF540N . HEXFET Power MOSFET. 03/13/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 1.15. R CS. Case-to-Sink, Flat, Greased Surface. 0.50. . C/W. R JA. Junction-to-Ambient. . 62. Thermal Resistance www. irf.com. 1. VDSS = 100V. RDS(on) = 44m . ID = 33A. S. D. G. TO-220AB. Advanced Mar 18, 2004 operation outside rated limits. This is a calculated value limited to TJ < 175 C . Uses IRF540N data and test conditions. ssWhen mounted on 1! square PCB ( FRr4 or Gr10 Material). For recommended footprint and soldering techniques refer to application note #ANr994 parameter. Min. Typ. Max. Units. Jul 1, 2005 operation outside rated limits. This is a calculated value limited to TJ = 175 C . Uses IRF540N data and test conditions. **When mounted on 1 square PCB ( FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Parameter. Min. Typ. Max. Units. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to IRF540N . Q2. IRF540N . Q3. IRF540N . Q4. IRF540N . Q5. IRF540N . Q6. IRF540N . R1. 270R. R2. 270R. R3. 270R. R4. 270R. R5. 270R. R6. 270R. R7. 10k. R8. 10k . R9. 10k. R10. 10k. R11. 10k. R12. 10k. D12 www.arduino.cc blogembarcado. blogspot.com. AT. ME. GA. 328P. AT. M. EL. D11. D10. D9. D8. D7. D6. D5. D4. D3.