(4/5) based on 6 customer reviews
Description
Jul 15, 2014 Environmentally Friendlier. MSL1, Industrial qualification. Increased Reliability. Form. Quantity. IRF5801TRPbF -1. TSOP-6. Tape and Reel. Dec 16, 2014 100V. C5. 200V. D1. 200V. D25. 430V. RV1. 1.00. 0.125W. R22. 1.00. 0.125W. R12. 1.00. 0.125W. R2. 3. 4. 5 6. 21. 200V. Q1. IRF5801TRPBF . Aug 25, 2014 MOSFET, N-CH, 200V, 0.6A, TSOP-6. International Rectifier. IRF5801TRPBF . 1. R1, R10,. R13. RES, 10k ohm, 5%, 0.1W, 0603. Vishay-Dale. Q1. 1. 200V. MOSFET, N-CH, 200V, 0.6A, TSOP-6. TSOP-6. International Rectifier. IRF5801TRPBF . Q2. 1. 0.25V. Transistor, NPN, 140V, 0.6A, SOT-23. SOT-23.
| Part Number | IRF5801TRPBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 200V 600MA 6-TSOP |
| Series | HEXFET |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 88pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 360mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro6,TSOP-6) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Image |  |
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