Part Number | IRF5806 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 20V 4A 6-TSOP |
Series | HEXFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 594pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Rds On (Max) @ Id, Vgs | 86 mOhm @ 4A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Micro6,TSOP-6) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
IRF5806
INFIENON
5627
0.69
Dedicate Electronics (HK) Limited
IRF5806
Infinen
39679
1.715
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF5806
INFLNEON
20000
2.74
Finestock Electronics HK Limited
IRF5806
Infineon Technologies A...
1000
3.765
MY Group (Asia) Limited
IRF5806
INFINEON/IR
18000
4.79
MASSTOCK ELECTRONICS LIMITED