Part Number | IRF5810TR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2P-CH 20V 2.9A 6-TSOP |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.9A |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 2.9A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 16V |
Power - Max | 960mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |
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