Part Number | IRF60B217 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 60A |
Series | StrongIRFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2230pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 36A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IRF60B217
INFIENON
2688
0.77
Shenzhen Hongying Micro Technology Co., Ltd
IRF60B217
Infinen
6000
1.9775
Shenzhen Qiangneng Electronics Co., Ltd.
IRF60B217
INFLNEON
10000
3.185
Shenzhen Taochip Electronic Co.,Ltd
IRF60B217
Infineon Technologies A...
3000
4.3925
HONGKONG SINIKO ELECTRONIC LIMITED
IRF60B217
INFINEON/IR
458600
5.6
Shenzhen WTX Capacitor Co., Ltd.