(4/5) based on 14 customer reviews
Description
Jun 6, 2005 IRF6216PbF . SMPS MOSFET. HEXFET. . Power MOSFET. Parameter. Max. Units. ID @ TA = 25 C. Continuous Drain Current, VGS @ 10V. Transistor, PNP, -60V, -600mA, 225-W. SOT23. MMBT2907ALT1 On Semi. 1. Q3. IRF6216PBF . MOSFET, PChan, -150V, -2.2A, 0.24 Ohm. SO8. IRF6216PBF . IR. Transistor, PNP, -60V, -600mA, 225-W. SOT23. MMBT2907ALT1. On Semi. 1. Q3 . IRF6216PBF . MOSFET, PChan, -150V, -2.2A, 0.24 Ohm. SO8. IRF6216PBF . Transistor, PNP, -60V, -600mA, 225-W. SOT23. MMBT2907ALT1. On Semi. 1. Q3 . IRF6216PBF . MOSFET, PChan, -150V, -2.2A, 0.24 Ohm. SO8. IRF6216PBF . Feb 10, 2011 Transistor, PNP, -60V, -600mA, 225-W. SOT23. MMBT2907ALT1 On Semi. 1. Q3. IRF6216PBF . MOSFET, PChan, -150V, -2.2A, 0.24 Ohm. SO8.
| Part Number | IRF6216PBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET P-CH 150V 2.2A 8-SOIC |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 240 mOhm @ 1.3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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