Rated 
(5/5) based on 2 customer reviews
(5/5) based on 2 customer reviews
Description
Jul 23, 2010 IRF630N /S/LPbF. S. D. G. Parameter. Min. Typ. Max. Units. Conditions. IS. Continuous Source Current. MOSFET symbol. (Body Diode). Page 1. Document Number: 91031 www.vishay.com. S11-0509-Rev. B, 21-Mar- 11. 1. This datasheet is subject to change without notice. THE PRODUCT IRF630NS . Q2, Q3. 2. NCH FET, 25 A, 30 V. Vishay. Si7894DP. Resistor. R1. 1. Thick Film, 49.9 , 0.125 W, 1%. Vishay. CRCW080549R9F100RT6. R2. 1.
| Part Number | IRF630NS |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 200V 9.3A D2PAK |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 575pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 82W (Tc) |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 5.4A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
Lowest Price: $1.34
Highest Price: $7.5
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IRF630NS
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2010
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HUA CHENG (H.K.) ELECTRONICS LIMITED
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IRF630NS
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22
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Splendent Technologies Pte Ltd
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IRF630NS
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Infineon Technologies A...
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TERNARY UNION CO., LIMITED
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