Part Number | IRF630NSPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 9.3A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 575pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 82W (Tc) |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 5.4A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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IRF630NSPBF
INFIENON
5620
1.56
Dedicate Electronics (HK) Limited
IRF630NSPBF
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16000
2.295
Finestock Electronics HK Limited
IRF630NSPBF
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Yingxinyuan INT'L (Group) Limited
IRF630NSPBF
Infineon Technologies A...
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CIS Ltd (CHECK IC SOLUTION LIMITED)
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OCEANIA INTERNATIONAL INDUSTRIAL LIMITED