(4/5) based on 20 customer reviews
Description
IRF630S , SiHF630S. Vishay Siliconix. FEATURES. Halogen-free According to IEC 61249-2-21. Definition. Surface Mount. Available in Tape and Reel. Package. TO-220AB. Lead (Pb)-free. IRF630PbF. SiHF630-E3. SnPb. IRF630 . SiHF630. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) . The HEXFET Power MOSFET used in all the examples is the IRF630 . The IRF630 was selected since it is a typical mid-range device with a voltage rating of Page 1. HEXFET Power MOSFET. 10/08/04. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 9.3. ID @ TC = 100 C. IRF230-233/ IRF630 -633. MTP12N18/12N20. N-Channel Power Mosfets. 12A, 150-200V www.artschip.com. 1. Description. These devices are n-channel,
| Part Number | IRF630S |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 200V 9A D2PAK |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 74W (Tc) |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 5.4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²ÂPAK (TO-263) |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
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