Part Number | IRF640NSPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 18A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1160pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRF640NSPBF
INFIENON
32000
0.73
ShenZhen YueXuan Technology Co,.Ltd.
IRF640NSPBF
Infinen
10055
2.055
Ande Electronics Co., Limited
IRF640NSPBF
INFLNEON
50
3.38
Yingxinyuan INT'L (Group) Limited
IRF640NSPBF
Infineon Technologies A...
2800
4.705
GOTSSON TECHNOLOGY (HONG KONG) CO., LIMITED
IRF640NSPBF
INFINEON/IR
180
6.03
SUNTOP SEMICONDUCTOR CO., LIMITED