Part Number | IRF640NSTRLPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 18A D2PAK |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1160pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
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IRF640NSTRLPBF
INFIENON
9644
0.41
HEXING TECHNOLOGY (HK) LIMITED
IRF640NSTRLPBF
Infinen
3365
1.1925
HEXING TECHNOLOGY (HK) LIMITED
IRF640NSTRLPBF
INFLNEON
7905
1.975
HEXING TECHNOLOGY (HK) LIMITED
IRF640NSTRLPBF
Infineon Technologies A...
9334
2.7575
HEXING TECHNOLOGY (HK) LIMITED
IRF640NSTRLPBF
INFINEON/IR
3833
3.54
TROXIN INTERNATIONAL LIMITED