Part Number | IRF640SPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 18A D2PAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 130W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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IRF640SPBF
INFIENON
410
0.37
FLOWER GROUP(HK)CO.,LTD
IRF640SPBF
Infinen
250
1.0975
Showtech International (HK) Co.,Limited
IRF640SPbF
INFLNEON
1000
1.825
HK FEILIDI ELECTRONIC CO., LIMITED
IRF640SPbF
Infineon Technologies A...
1000
2.5525
Redstar Electronic Limited
IRF640SPBF
INFINEON/IR
17000
3.28
N&S Electronic Co., Limited