Part Number | IRF6607 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 27A DIRECTFET |
Series | HEXFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 94A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 75nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 6930pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 42W (Tc) |
Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 25A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MT |
Package / Case | DirectFET,Isometric MT |
Image |
IRF6607
INFIENON
336
0.56
KHWY GROUP LIMITED
IRF6607
Infinen
2051
1.5775
ATLANTIC TECHNOLOGY LIMITED
IRF6607
INFLNEON
553
2.595
RX ELECTRONICS LIMITED
IRF6607
Infineon Technologies A...
5863
3.6125
Yingxinyuan INT'L (Group) Limited
IRF6607
INFINEON/IR
1716
4.63
CIS Ltd (CHECK IC SOLUTION LIMITED)