Part Number | IRF6610TR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 20V 15A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 66A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1520pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
Rds On (Max) @ Id, Vgs | 6.8 mOhm @ 15A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,SQ |
Package / Case | DirectFET,Isometric SQ |
Image |
IRF6610TR1PBF
INFIENON
1000
1.24
HK HEQING ELECTRONICS LIMITED
IRF6610TR1PBF
Infinen
18500
1.7375
Ysx Tech Co., Limited
IRF6610TR1PBF
INFLNEON
3500
2.235
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF6610TR1PBF
Infineon Technologies A...
4142
2.7325
ATLANTIC TECHNOLOGY LIMITED
IRF6610TR1PBF
INFINEON/IR
890
3.23
Yingxinyuan INT'L (Group) Limited