Part Number | IRF6619TR1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 20V 30A DIRECTFET |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 150A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.45V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 5040pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 30A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MX |
Package / Case | DirectFET,Isometric MX |
Image |
IRF6619TR1
INFIENON
950
1.32
HK HEQING ELECTRONICS LIMITED
IRF6619TR1
Infinen
16000
2.155
Finestock Electronics HK Limited
IRF6619TR1
INFLNEON
1579
2.99
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF6619TR1
Infineon Technologies A...
51000
3.825
Yingxinyuan INT'L (Group) Limited
IRF6619TR1
INFINEON/IR
25029
4.66
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED