Part Number | IRF6621TR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 12A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1460pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
Rds On (Max) @ Id, Vgs | 9.1 mOhm @ 12A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,SQ |
Package / Case | DirectFET,Isometric SQ |
Image |
IRF6621TR1PBF
INFIENON
7361
1.23
Ysx Tech Co., Limited
IRF6621TR1PBF
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Cinty Int'l (HK) Industry Co., Limited
IRF6621TR1PBF
INFLNEON
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Yingxinyuan INT'L (Group) Limited
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Infineon Technologies A...
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N&S Electronic Co., Limited
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INFINEON/IR
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