Part Number | IRF6626TR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 16A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 72A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.35V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2380pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 16A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,ST |
Package / Case | DirectFET,Isometric ST |
Image |
IRF6626TR1PBF
INFIENON
6026
0.85
Dedicate Electronics (HK) Limited
IRF6626TR1PBF
Infinen
55322
1.66
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IRF6626TR1PBF
INFLNEON
20000
2.47
Finestock Electronics HK Limited
IRF6626TR1PBF
Infineon Technologies A...
5100
3.28
FLOWER GROUP(HK)CO.,LTD
IRF6626TR1PBF
INFINEON/IR
3252
4.09
ZHONG HAI SHENG TECHNOLOGY LIMITED