Part Number | IRF6629TR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 25V 29A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.35V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 4260pF @ 13V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 100W (Tc) |
Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 29A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MX |
Package / Case | DirectFET,Isometric MX |
Image |
IRF6629TR1PBF
INFIENON
36
0.17
HK ZHIRUI ELECTRONICS LIMITED
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Infinen
16000
1.1675
Finestock Electronics HK Limited
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INFLNEON
1000
2.165
MY Group (Asia) Limited
IRF6629TR1PBF
Infineon Technologies A...
11036
3.1625
CIS Ltd (CHECK IC SOLUTION LIMITED)
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INFINEON/IR
13461
4.16
Viassion Technology Co., Limited