Part Number | IRF6641TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 4.6A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta), 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.9V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2290pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Rds On (Max) @ Id, Vgs | 59.9 mOhm @ 5.5A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MZ |
Package / Case | DirectFET,Isometric MZ |
Image |
IRF6641TRPBF
INFIENON
3000
0.03
HONGKONG SINIKO ELECTRONIC LIMITED
IRF6641TRPBF
Infinen
16000
1.0875
Finestock Electronics HK Limited
IRF6641TRPBF
INFLNEON
49850
2.145
Hong Kong H.D.W Trading Co., Limited
IRF6641TRPBF
Infineon Technologies A...
8000
3.2025
GOTSSON TECHNOLOGY (HONG KONG) CO., LIMITED
IRF6641TRPBF
INFINEON/IR
72320
4.26
IC Chip Co., Ltd.