Part Number | IRF6644TR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 10.3A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.8V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2210pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 10.3A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MN |
Package / Case | DirectFET,Isometric MN |
Image |
IRF6644TR1PBF
INFIENON
2764
0.67
HK HEQING ELECTRONICS LIMITED
IRF6644TR1PBF
Infinen
1263
1.4225
F-power Electronics Co
IRF6644TR1PBF
INFLNEON
3226
2.175
AB Sunshine Components Limited
IRF6644TR1PBF
Infineon Technologies A...
6818
2.9275
Innovation Best Electronics Technology Limited
IRF6644TR1PBF
INFINEON/IR
1635
3.68
Yingxinyuan INT'L (Group) Limited