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Description
Aug 5, 2005 The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom Dec 19, 2005 www.irf.com. IRAUDAMP3. 120W x 6 Channel Class D Audio Power Amplifier using IRS20124S and IRF6645 . By. Jun Honda, Johan Strydom Mar 28, 2007 RD-0617. IRAUDAMP4. 120 W x 2 Channel Class D Audio Power Amplifier. Using IRS20955 and IRF6645 . By. Johan Strydom, Jun Honda, IRF6645 . IRF6775M. Reference Design: IRAUDAMP10. Two-channel 300 W ( 4mOhms) Half-bridge Class-D Audio Power Amplifier. 300 W x 2 channels, IRAUDAMP5. 120W x 2 Channel Class D Audio Power Amplifier. Using the IRS2092S and IRF6645 . By. Jun Honda, Manuel Rodr guez and Jorge Cerezo. Fig 1.
| Part Number | IRF6645 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 100V DIRECTFET-SJ |
| Series | HEXFET |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta), 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 42W (Tc) |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 5.7A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET,SJ |
| Package / Case | DirectFET,Isometric SJ |
| Image |  |
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