Part Number | IRF6646TR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 80V 12A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 68A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.9V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 12A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MN |
Package / Case | DirectFET,Isometric MN |
Image |
IRF6646TR1PBF
INFIENON
239
0.97
HK HEQING ELECTRONICS LIMITED
IRF6646TR1PBF
Infinen
4353
1.9075
Ysx Tech Co., Limited
IRF6646TR1PBF
INFLNEON
7414
2.845
Belt (HK) Electronics Co
IRF6646TR1PBF
Infineon Technologies A...
3381
3.7825
Z.H.T TECHNOLOGY HK LIMITED
IRF6646TR1PBF
INFINEON/IR
4367
4.72
Cicotex Electronics (HK) Limited