Part Number | IRF6655TR1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V DIRECTFET-SH |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta), 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.8V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 11.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
Rds On (Max) @ Id, Vgs | 62 mOhm @ 5A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,SH |
Package / Case | DirectFET,Isometric SH |
Image |
IRF6655TR1
INFIENON
16000
1.01
Finestock Electronics HK Limited
IRF6655TR1
Infinen
10000
1.2575
Hong Kong Gihe Electronics Co., Limited
IRF6655TR1
INFLNEON
9213
1.505
Viassion Technology Co., Limited
IRF6655TR1
Infineon Technologies A...
1630
1.7525
Asia Super Components (HK) Co Ltd.
IRF6655TR1
INFINEON/IR
1000
2
MY Group (Asia) Limited