Part Number | IRF6655TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 4.2A DIRECTFET |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta), 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.8V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 11.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
Rds On (Max) @ Id, Vgs | 62 mOhm @ 5A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,SH |
Package / Case | DirectFET,Isometric SH |
Image |
IRF6655TRPBF
INFIENON
3432
1.57
ShenZhen YueXuan Technology Co,.Ltd.
IRF6655TRPBF
Infinen
1891
2.5
SAIPU ELECTRONICS(HK) TECHNOLOGY LIMITED
IRF6655TRPBF
INFLNEON
3353
3.43
ShenZhen YueXuan Technology Co,.Ltd.
IRF6655TRPBF
Infineon Technologies A...
404
4.36
N&S Electronic Co., Limited
IRF6655TRPBF
INFINEON/IR
9276
5.29
Yingxinyuan INT'L (Group) Limited