Part Number | IRF6665TR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 4.2A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta), 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
Rds On (Max) @ Id, Vgs | 62 mOhm @ 5A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,SH |
Package / Case | DirectFET,Isometric SH |
Image |
IRF6665TR1PBF
INFIENON
5497
1.59
Ande Electronics Co., Limited
IRF6665TR1PBF
Infinen
1266
2.795
Semic Pte. Ltd
IRF6665TR1PBF
INFLNEON
8323
4
Finestock Electronics HK Limited
IRF6665TR1PBF
Infineon Technologies A...
5913
5.205
Bonase Electronics (HK) Co., Limited
IRF6665TR1PBF
INFINEON/IR
793
6.41
Hong Kong H.D.W Trading Co., Limited