Part Number | IRF6668TR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 80V 55A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1320pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 12A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MZ |
Package / Case | DirectFET,Isometric MZ |
Image |
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