Part Number | IRF6674TR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 13.4A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 13.4A (Ta), 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 89W (Tc) |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 13.4A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MZ |
Package / Case | DirectFET,Isometric MZ |
Image |
IRF6674TR1PBF
INFIENON
50
0.46
Bonase Electronics (HK) Co., Limited
IRF6674TR1PBF
Infinen
1000
1.545
MY Group (Asia) Limited
IRF6674TR1PBF
INFLNEON
16223
2.63
HongKong Wanghua Technology Limited
IRF6678TR1
Infineon Technologies A...
1105
3.715
Bonase Electronics (HK) Co., Limited
IRF6674TRPBF
INFINEON/IR
18000
4.8
MY Group (Asia) Limited