Part Number | IRF6678TR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 30A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 150A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 5640pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 30A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MX |
Package / Case | DirectFET,Isometric MX |
Image |
IRF6678TR1PBF
INFIENON
16000
0.89
Finestock Electronics HK Limited
IRF6678TR1PBF
Infinen
3000
2.1
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF6678TR1PBF
INFLNEON
3980
3.31
Ysx Tech Co., Limited
IRF6678TR1PBF
Infineon Technologies A...
31159
4.52
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IRF6678TR1PBF
INFINEON/IR
5000
5.73
Ande Electronics Co., Limited