Part Number | IRF6691TR1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 20V 32A DIRECTFET |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 71nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 6580pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 15A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MT |
Package / Case | DirectFET,Isometric MT |
Image |
IRF6691TR1
INFIENON
3158
1.61
KDH SEMICONDUCTOR CO., LIMITED
IRF6691TR1
Infinen
2248
2.7375
IC Chip Co., Ltd.
IRF6691TR1
INFLNEON
3675
3.865
Xiefeng (HK) INT'L Electronics Limited
IRF6691TR1
Infineon Technologies A...
5161
4.9925
Cicotex Electronics (HK) Limited
IRF6691TR1
INFINEON/IR
7536
6.12
Yingxinyuan INT'L (Group) Limited