Part Number | IRF6712STR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 25V 17A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 68A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1570pF @ 13V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.2W (Ta), 36W (Tc) |
Rds On (Max) @ Id, Vgs | 4.9 mOhm @ 17A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,SQ |
Package / Case | DirectFET,Isometric SQ |
Image |
IRF6712STR1PBF
INFIENON
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1.1
Finestock Electronics HK Limited
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Infinen
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HK HEQING ELECTRONICS LIMITED
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INFLNEON
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Dedicate Electronics (HK) Limited
IRF6712STR1PBF
Infineon Technologies A...
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CIS Ltd (CHECK IC SOLUTION LIMITED)
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Ande Electronics Co., Limited