Part Number | IRF6717MTR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 25V 38A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 38A (Ta), 200A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.35V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 6750pF @ 13V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 96W (Tc) |
Rds On (Max) @ Id, Vgs | 1.25 mOhm @ 38A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MX |
Package / Case | DirectFET,Isometric MX |
Image |
IRF6717MTR1PBF
INFIENON
13982
0.55
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF6717MTR1PBF
Infinen
10500
1.3675
SAIPU ELECTRONICS(HK) TECHNOLOGY LIMITED
IRF6717MTR1PBF
INFLNEON
5984
2.185
Dedicate Electronics (HK) Limited
IRF6717MTR1PBF
Infineon Technologies A...
5592
3.0025
Dedicate Electronics (HK) Limited
IRF6717MTR1PBF
INFINEON/IR
13982
3.82
N&S Electronic Co., Limited