Part Number | IRF6725MTR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 28A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 170A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.35V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 4700pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 100W (Tc) |
Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 28A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MX |
Package / Case | DirectFET,Isometric MX |
Image |
Hot Offer
IRF6725MTR1PBF
INFIENON
38128
1.45
VBsemi Electronics Co., Limited
IRF6725MTR1PBF
Infinen
16000
2.2575
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF6725MTR1PBF
INFLNEON
1000
3.065
Yingxinyuan INT'L (Group) Limited
IRF6725MTR1PBF
Infineon Technologies A...
21929
3.8725
N&S Electronic Co., Limited
IRF6725MTR1PBF
INFINEON/IR
18650
4.68
Fairstock HK Limited