Part Number | IRF6729MTR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 31A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 190A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.35V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 6030pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 104W (Tc) |
Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 31A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MX |
Package / Case | DirectFET,Isometric MX |
Image |
IRF6729MTR1PBF
INFIENON
5587
1.14
Dedicate Electronics (HK) Limited
IRF6729MTR1PBF
Infinen
18650
1.535
Fairstock HK Limited
IRF6729MTR1PBF
INFLNEON
16000
1.93
Finestock Electronics HK Limited
IRF6729MTR1PBF
Infineon Technologies A...
2419
2.325
Top Electronics Co.,
IRF6729MTR1PBF
INFINEON/IR
10000
2.72
Hong Kong Huoji Electronics Co., Limited