(4/5) based on 12 customer reviews
Description
Feb 26, 2014 Description. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized Jan 25, 2012 P2, P3. 281-1414-ND. Weidmuller. 2. MJD44H11T4G. TRANS PWR NPN 8A 80V . DPAK. Q1, Q8. MJD44H11T4GOSCT-. ND. ON Semiconductor. 4. IRF6775MPBF. MOSFET, 150V, 28A, 47. mOhm, 25 nC Qg, Med Can, optimized for Audio. Q1A, Q1B, Q2A, Q2B. IRF6775MTR1PBF . International Rectifier
| Part Number | IRF6775MTR1PBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 150V 4.9A DIRECTFET |
| Series | HEXFET |
| Packaging | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta), 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1411pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Rds On (Max) @ Id, Vgs | 56 mOhm @ 5.6A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET,MZ |
| Package / Case | DirectFET,Isometric MZ |
| Image |  |
IRF6775MTR1PBF
INFIENON
7800
0.32
HK HEQING ELECTRONICS LIMITED
IRF6775MTR1PBF
Infinen
60267
1.3525
IC Chip Co., Ltd.
IRF6775MTR1PBF
INFLNEON
62338
2.385
KHWY GROUP LIMITED
IRF6775MTR1PBF
Infineon Technologies A...
28800
3.4175
N&S Electronic Co., Limited
IRF6775MTR1PBF
INFINEON/IR
62670
4.45
Innovation Best Electronics Technology Limited
