Part Number | IRF6785MTR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 3.4A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta), 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 4.2A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MZ |
Package / Case | DirectFET,Isometric MZ |
Image |
IRF6785MTR1PBF
INFIENON
1000
0.72
MY Group (Asia) Limited
IRF6785MTRPBF
Infinen
18000
1.935
MY Group (Asia) Limited
IRF6785MTRPBF
INFLNEON
20000
3.15
HONG KONG LION ELECTRONIC LIMITED
IRF6785MTRPBF
Infineon Technologies A...
10000
4.365
C&G Electronics (HK) Co., Ltd
IRF6785MTRPBF
INFINEON/IR
18735
5.58
HongKong Wanghua Technology Limited