Part Number | IRF6797MTR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 25V 36A DIRECTFET |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 210A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.35V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 5790pF @ 13V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 mOhm @ 38A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MX |
Package / Case | DirectFET,Isometric MX |
Image |
IRF6797MTR1PBF
INFIENON
32000
0.7
ShenZhen YueXuan Technology Co,.Ltd.
IRF6797MTR1PBF
Infinen
1995
1.815
Bonase Electronics (HK) Co., Limited
IRF6797MTR1PBF
INFLNEON
16000
2.93
Finestock Electronics HK Limited
IRF6797MTR1PBF IRF6797MTRPBF
Infineon Technologies A...
15079
4.045
N&S Electronic Co., Limited
IRF6797MTR1PBF
INFINEON/IR
3000
5.16
ENSPIRE TECHNOLOGY (HONG KONG) CO., LIMITED