Infineon Technologies AG

Description

Datasheet Aug 25, 1997 HEXFET Power MOSFET. PD - 9.1095B l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Feb 9, 2010 HEXFET Power MOSFET. PD -95037B l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Jun 30, 2014 HEXFET Power MOSFET. D1. D1. D2. D2. G1. S2. G2. S1. Top View. 8. 1. 2. 3. 4. 5. 6. 7. Parameter. Min. Typ. Max. Units. R JA. Maximum 0. IRF7842. -55 C/150 C. 0. 80. 1000. 0. IRF1902. -55 C/150 C. 0. 80. 1000. 0. IRF7103 . -55 C/150 C. 0. 120. 1000. 0. IRF7204. -55 C/150 C. 0. 40. 1000. 0 1 www.irf.com. In this application note, some of the most common dos and donts of using HEXFET power MOSFETs are described. The objective is to help the