Part Number | IRF7202TR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 20V 2.5A 8-SOIC |
Series | HEXFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 20V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta), 2.5W (Tc) |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF7202TR
INFIENON
5574
1.9
Dedicate Electronics (HK) Limited
IRF7202TR
Infinen
1000
2.6
MY Group (Asia) Limited
IRF7202TR
INFLNEON
1100
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Dopoint Hi-Tech Limited
IRF7202TR
Infineon Technologies A...
100700
4
Jealasentec(HK) Semiconductors Co.,Limited
IRF7202TR
INFINEON/IR
60000
4.7
Chongway Electronics Tech Limited