Description
MOSFET 2P-CH 30V 4.9A 8SOIC Series: HEXFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 4.9A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
Part Number | IRF7316GTRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2P-CH 30V 4.9A 8SOIC |
Series | HEXFET |
Packaging | Cut Tape (CT) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4.9A |
Rds On (Max) @ Id, Vgs | 58 mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 25V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
IRF7316GTRPBF
INFIENON
16000
0.24
Finestock Electronics HK Limited
IRF7316GTRPBF
Infinen
5560
1.6325
Dedicate Electronics (HK) Limited
IRF7316GTRPBF
INFLNEON
8000
3.025
MY Group (Asia) Limited
IRF7316GTRPBF
Infineon Technologies A...
35800
4.4175
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF7316GTRPBF
INFINEON/IR
3484
5.81
Dan-Mar Components Inc.