(4/5) based on 18 customer reviews
Description
MOSFET N-CH 55V 5.1A Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25～C: 5.1A Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 1V @ 250米A (Min) Gate Charge (Qg) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) @ Vds: 780pF @ 25V Power - Max: 2.4W Operating Temperature: -55～C ~ 175～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
| Part Number | IRF7341GTRPBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 55V 5.1A |
| Series | HEXFET |
| Packaging | Tape & Reel (TR) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 5.1A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V |
| Power - Max | 2.4W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
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