Description
Datasheet Aug 10, 2004 IRF7401PbF . Parameter. Min. Typ. Max. Units. Conditions. V(BR)DSS. Drain-to- Source Breakdown Voltage. 20. . V. VGS = 0V, ID = Feb 13, 2001 HEXFET Power MOSFET. PD - 9.1244C l Generation V Technology l Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available
Part Number | IRF7401PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 20V 8.7A 8-SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 8.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 4.1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF7401PBF
INFIENON
10220
0.15
SUNTOP SEMICONDUCTOR CO., LIMITED
IRF7401PBF
Infinen
1719
0.9825
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF7401PBF
INFLNEON
13331
1.815
ATLANTIC TECHNOLOGY LIMITED
IRF7401PBF
Infineon Technologies A...
4050
2.6475
FLOWER GROUP(HK)CO.,LTD
IRF7401PBF
INFINEON/IR
34880
3.48
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED